The 30% Efficiency Triple Junction GaAs Solar Cell is a high-performance solar cell tailored for demanding space applications. Its multi-junction technology enables exceptional power conversion efficiency, making it a preferred choice for satellites and spacecraft requiring reliable energy sources in space.
Using advanced GaInP/InGaAs/Ge materials, this solar cell achieves a 30% efficiency at the beginning of life (BOL) and offers robust performance even in radiation-intense environments, making it suitable for various space missions.
Key Features:
- High Efficiency: 30% efficiency at the beginning of life (BOL) under standard AM0 conditions.
- Triple Junction Technology: GaInP/InGaAs/Ge layers optimize power generation across multiple wavelengths of solar radiation.
- Radiation Resistance: The cell retains a significant portion of its efficiency even after exposure to radiation doses up to 1×10¹⁵ e/cm², making it ideal for long-term missions.
- Bypass Diode Integration: Built-in silicon bypass diode for enhanced shadow protection and reliability in orbit.
- Compact & Lightweight: The cell measures 80.15mm × 40.15mm with a thickness of 320±20μm, and weighs just 3.6g, making it perfect for space-constrained applications.
Radiation Degradation:
The solar cell has been designed to withstand radiation exposure, with the following degradation data:
- Current Retention (Im/Im₀): 0.93 after 1×10¹⁵ e/cm²
- Voltage Retention (Vm/Vm₀): 0.90 after 1×10¹⁵ e/cm²
- Power Retention (Pm/Pm₀): 0.84 after 1×10¹⁵ e/cm²
Applications:
- Low-Earth Orbit (LEO) Satellites
- Geostationary Satellites (GEO)
- Interplanetary Spacecraft
- CubeSats and Nanosatellites requiring high-efficiency, compact power solutions.
Shadow Protection:
The solar cell features a discrete bypass diode, ensuring continued performance even under partial shadowing conditions, vital for maintaining system integrity in orbit.
Environmental Tolerances:
- Temperature Coefficient: The cell is optimized for space environments, with temperature-related performance coefficients available for different radiation doses.
- Radiation Resistance: Capable of withstanding high doses of electron and proton radiation, ensuring long mission durations without significant efficiency loss.
Technical Specifications:
| Parameter | BOL (Beginning of Life) | EOL (End of Life, 1 MeV, 1×10¹⁵ e/cm²) |
|---|---|---|
| Open Circuit Voltage (Voc) | 2768 mV | 2455 mV |
| Short Circuit Current (Jsc) | 17.6 mA/cm² | 16.9 mA/cm² |
| Max Power Voltage (Vm) | 2411 mV | 2145 mV |
| Max Power Current (Jm) | 17.0 mA/cm² | 16.2 mA/cm² |
| Efficiency (η) | 30.0% | 25.4% |
| Dimensions | 80.15mm × 40.15mm | - |
| Thickness | 320±20μm | - |
| Weight | 3.6g | - |